IRF6629PBF mosfet equivalent, directfet power mosfet.
Fig 4. Typical Output Characteristics
1000 VDS = 15V ≤60µs PULSE WIDTH 100 T J = 150°C 10 T J = 25°C T J = -40°C
Fig 5. Typical Output Characteristics
1.6 ID = 29A
Typic.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package .
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